NXP Semiconductors PIP3210-R Manual de usuario

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Philips Semiconductors Product specification
TOPFET high side switch PIP3210-R
DESCRIPTION QUICK REFERENCE DATA
Monolithic single channel high side SYMBOL PARAMETER MIN. UNIT
protected power switch in
TOPFET2 technology assembled in I
L
Nominal load current (ISO) 9 A
a 5 pin plastic surface mount
package.
SYMBOL PARAMETER MAX. UNIT
APPLICATIONS
V
BG
Continuous off-state supply voltage 50 V
General controller for driving I
L
Continuous load current 20 A
lamps, motors, solenoids, heaters. T
j
Continuous junction temperature 150 ˚C
R
ON
On-state resistance T
j
= 25˚C 38 m
FEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting
Latched overload and
short circuit protection
Overvoltage and undervoltage
shutdown with hysteresis
On-state open circuit load
detection
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT426 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 Ground
2 Input
3 (connected to mb)
4 Status
5 Load
Fig. 2. Fig. 3.
mb Battery
BATT
LOAD
INPUT
GROUND
STATUS
POWER
MOSFET
RG
CONTROL &
PROTECTION
CIRCUITS
mb
12 45
3
B
G
L
I
S
HSS
TOPFET
September 2001 1 Rev 1.000
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Indice de contenidos

Pagina 1 - APPLICATIONS

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R DESCRIPTION QUICK REFERENCE DATAMonolithic single channel high side SYM

Pagina 2 - THERMAL CHARACTERISTICS

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R Fig.22. Typical battery to ground clamping voltage.VBG = f(Tj); para

Pagina 3 - STATIC CHARACTERISTICS

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R Fig.28. Short circuit load threshold voltage.VBL(TO) = f(VBG); condi

Pagina 4 - STATUS CHARACTERISTICS

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R MECHANICAL DATAFig.34. SOT426 surface mounting package1, centre pin c

Pagina 5 - KEY TO ABBREVIATIONS

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R DEFINITIONSDATA SHEET STATUSDATA SHEET PRODUCT DEFINITIONSSTATUS1STATU

Pagina 6 - CAPACITANCES

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R LIMITING VALUESLimiting values in accordance with the Absolute Maximum

Pagina 7

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R STATIC CHARACTERISTICSLimits are at -40˚C ≤ Tmb ≤ 150˚C and typicals a

Pagina 8 - C

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R INPUT CHARACTERISTICS9 V ≤ VBG ≤ 16 V. Limits are at -40˚C ≤ Tmb ≤ 15

Pagina 9

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICSLimits are at -40˚C ≤ Tm

Pagina 10 - -50 0 50 100 150 200

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R OVERLOAD PROTECTION CHARACTERISTICS5.5 V ≤ VBG ≤ 35 V, limits are at -

Pagina 11 - Zth j-mb ( K / W )

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R Fig.4. High side switch measurements schematic.(current and voltage

Pagina 12 - MECHANICAL DATA

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R Fig.10. Typical supply quiescent current.IB = f(Tj); condition VBG =

Pagina 13 - LIFE SUPPORT APPLICATIONS

Philips Semiconductors Product specification TOPFET high side switch PIP3210-R Fig.16. Typical status low characteristic.VSG = f(Tj); conditions VB

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